? semiconductor components industries, llc, 2005 march, 2005 ? rev. 5 1 publication order number: bss123lt1/d bss123lt1 preferred device power mosfet 170 mamps, 100 volts n?channel sot?23 features ? pb?free packages are available maximum ratings rating symbol value unit drain?source voltage v dss 100 vdc gate?source voltage ? continuous ? non?repetitive (t p 50 s) v gs v gsm 20 40 vdc vpk drain current ? continuous (note 1) ? pulsed (note 2) i d i dm 0.17 0.68 adc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 3) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. the power dissipation of the package may result in a lower continuous drain current. 2. pulse width 300 s, duty cycle 2.0%. 3. fr?5 = 1.0 0.75 0.062 in. 3 1 2 n?channel sot?23 case 318 style 21 marking diagram sa sa = device code m = date code pin assignment 3 2 1 drain gate 2 1 3 source 170 mamps 100 volts r ds(on) = 6 preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com m
bss123lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 250 adc) v (br)dss 100 ? ? vdc zero gate voltage drain current (v gs = 0, v ds = 100 vdc) t j = 25 c t j = 125 c i dss ? ? ? ? 15 60 adc gate?body leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 50 nadc on characteristics (note 4) gate threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.8 ? 2.8 vdc static drain?source on?resistance (v gs = 10 vdc, i d = 100 madc) r ds(on) ? 5.0 6.0 forward transconductance (v ds = 25 vdc, i d = 100 madc) g fs 80 ? ? mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? 20 ? pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss ? 9.0 ? pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss ? 4.0 ? pf switching characteristics (4) turn?on delay time (v cc = 30 vdc, i c = 0.28 adc, t d(on) ? 20 ? ns turn?off delay time (v cc 30 vdc , i c 0 . 28 adc , v gs = 10 vdc, r gs = 50 ) t d(off) ? 40 ? ns reverse diode diode forward on?voltage (i d = 0.34 adc, v gs = 0 vdc) v sd ? ? 1.3 v 4. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information device package shipping 2 bss123lt1 sot?23 3,000 tape & reel bss123lt1g sot?23 (pb?free) 3,000 tape & reel bss123lt3 sot?23 10,000 tape & reel bss123lt3g sot?23 (pb?free) 10,000 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bss123lt1 http://onsemi.com 3 typical electrical characteristics i d , drain current (amps) r ds(on) , static drain-source on-resistance (normalized) v gs(th) , threshold voltage (normalized) i d , drain current (amps) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v ds , dran source voltage (volts) figure 1. ohmic region 1.0 0.8 0.6 0.4 0.2 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate source voltage (volts) figure 2. transfer characteristics 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 t, temperature ( c) figure 3. temperature versus static drain?source on?resistance t, temperature ( c) figure 4. temperature versus gate threshold voltage t a = 25 c v gs = 10 v 9 v 8 v 7 v 6 v 4 v 3 v 5 v v ds = 10 v -55 c 25 c 125 c v gs = 10 v i d = 200 ma v ds = v gs i d = 1.0 ma
bss123lt1 http://onsemi.com 4 package dimensions sot?23 (to?236) case 318?08 issue ak *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 21: pin 1. gate 2. source 3. drain d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bss123lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
